Manufacturer Part Number
STPSC406B-TR
Manufacturer
STMicroelectronics
Introduction
High-performance silicon carbide (SiC) Schottky diode
Product Features and Performance
Extremely fast switching speed with no reverse recovery time
Ultra-low forward voltage drop
High junction temperature operation up to 175°C
Low capacitance of 200pF at 0V, 1MHz
High reverse voltage capability up to 600V
Product Advantages
Improved efficiency in power conversion applications
Reduced switching losses
Compact and robust package design
Key Technical Parameters
Reverse Leakage Current: 50μA @ 600V
Forward Voltage: 1.9V @ 4A
Reverse Recovery Time: 0ns
Operating Temperature Range: -40°C to 175°C
Quality and Safety Features
RoHS3 compliant
Qualified to automotive standards
Compatibility
Surface mount DPAK (TO-252-3) package
Application Areas
Switch-mode power supplies
Power factor correction circuits
Motor drives
Electric vehicle chargers
Renewable energy systems
Product Lifecycle
Currently available, no plans for discontinuation
Upgrades and replacements may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and performance for power conversion applications
Robust design and high-temperature operation
Compact and easy to integrate
Proven reliability and quality from a trusted manufacturer