Manufacturer Part Number
STPSC2H12B-TR1
Manufacturer
STMicroelectronics
Introduction
High-performance SiC Schottky diode for power electronics applications
Product Features and Performance
Extremely low reverse recovery time (0 ns)
Low forward voltage drop (1.5 V @ 2 A)
High reverse voltage (1200 V)
High current capability (5 A average rectified current)
Wide operating temperature range (-40°C to 175°C)
Low capacitance (190 pF @ 0 V, 1 MHz)
Product Advantages
Excellent efficiency and reliability
Reduced switching losses
Compact design
Key Technical Parameters
Reverse Leakage Current: 12 A @ 1200 V
Forward Voltage: 1.5 V @ 2 A
Operating Temperature Range: -40°C to 175°C
Reverse Recovery Time: 0 ns
Capacitance: 190 pF @ 0 V, 1 MHz
Reverse Voltage: 1200 V
Average Rectified Current: 5 A
Quality and Safety Features
Qualified to automotive standards
Robust and reliable design
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Renewable energy systems
Electric vehicles
Industrial automation
Product Lifecycle
Currently in production
No plans for discontinuation
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Exceptional efficiency and reliability
Compact and robust design
Broad operating temperature range
Highly suitable for demanding power electronics applications
Proven performance and quality