Manufacturer Part Number
STPSC40065CW
Manufacturer
STMicroelectronics
Introduction
High-performance SiC (Silicon Carbide) Schottky Diode in a TO-247-3 package
Product Features and Performance
Fast recovery time of ≤500ns
High reverse voltage of 650V
High average rectified current of 20A per diode
Wide operating temperature range of -40°C to 175°C
SiC (Silicon Carbide) technology for improved efficiency and reliability
Product Advantages
Superior performance compared to traditional silicon diodes
Suitable for high-power, high-frequency applications
Enhanced energy efficiency and reduced power losses
Robust design with high temperature and voltage capabilities
Key Technical Parameters
Reverse Leakage Current: 300A @ 600V
Forward Voltage (Vf): 1.7V @ 20A
Diode Configuration: 1 Pair Common Cathode
Mounting Type: Through Hole
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Suitable for a wide range of high-power, high-frequency applications
Application Areas
Power supplies
Motor drives
Renewable energy systems
Electric vehicles
Industrial automation
Product Lifecycle
Currently in production
Replacement and upgrade options available
Several Key Reasons to Choose This Product
Exceptional performance and efficiency due to SiC technology
Robust and reliable design for harsh operating conditions
Wide range of applications in high-power, high-frequency systems
Ease of integration with through-hole mounting
Availability of replacement and upgrade options