Manufacturer Part Number
STPSC20H12CWL
Manufacturer
STMicroelectronics
Introduction
High-performance silicon carbide (SiC) Schottky diode
Product Features and Performance
Very low forward voltage drop
Extremely fast reverse recovery time (0 ns)
High blocking voltage (1200 V)
High average rectified current (25 A per diode)
Low leakage current
Wide operating temperature range (-40°C to 175°C)
Product Advantages
Excellent efficiency and power density
Reduced switching losses
Improved thermal management
Reliable and robust design
Key Technical Parameters
Voltage DC Reverse (Vr) (Max): 1200 V
Current Average Rectified (Io) (per Diode): 25 A
Voltage Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Reverse Recovery Time (trr): 0 ns
Operating Temperature Junction: -40°C ~ 175°C
Quality and Safety Features
ROHS3 compliant
Robust TO-247-3 package
Compatibility
Through-hole mounting
Application Areas
Power electronics
Industrial equipment
Renewable energy systems
Electric vehicles
Motor drives
Product Lifecycle
Currently available
No indication of discontinuation
Potential upgrades or replacements may be available in the future
Several Key Reasons to Choose This Product
Excellent performance and efficiency
Extremely fast switching capability
Wide operating temperature range
Reliable and robust design
Compatibility with various applications