Manufacturer Part Number
STPSC20065DY
Manufacturer
STMicroelectronics
Introduction
SiC (Silicon Carbide) Schottky Diode
Product Features and Performance
Extremely fast switching speed with no reverse recovery time
Low forward voltage drop
High junction temperature operation up to 175°C
High current handling capability up to 20A average rectified current
High reverse voltage rating up to 650V
Product Advantages
Improved energy efficiency
Reduced system size and weight
Increased system reliability
Wide operating temperature range
Key Technical Parameters
Current Reverse Leakage @ Vr: 150 A @ 600 V
Voltage Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Reverse Recovery Time (trr): 0 ns
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Voltage DC Reverse (Vr) (Max): 650 V
Current Average Rectified (Io): 20A
Quality and Safety Features
RoHS3 Compliant
Automotive, AEC-Q101 qualified
ECOPACK2 package for environmental protection
Compatibility
Through Hole mounting type
TO-220AC package
Application Areas
Automotive electronics
Power supplies
Inverters
Motor drives
Renewable energy systems
Product Lifecycle
Currently in active production
No plans for discontinuation
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent energy efficiency due to low forward voltage and fast switching
Robust design for high temperature and high current applications
Compact size and weight-saving due to high power density
Reliable performance in harsh environments
Long product lifecycle with available replacements and upgrades