Manufacturer Part Number
STPSC4H065B-TR
Manufacturer
STMicroelectronics
Introduction
High-performance Silicon Carbide (SiC) Schottky Diode
Product Features and Performance
High forward current capability (4A)
Low forward voltage drop (1.75V @ 4A)
Ultra-fast switching with zero reverse recovery time
Excellent thermal management with TO-252-3 package
Capable of operating at high temperatures up to 175°C
Product Advantages
Increased energy efficiency
Reduced power losses
Compact design
High reliability
Key Technical Parameters
Voltage DC Reverse (Vr): 650V
Current Average Rectified (Io): 4A
Reverse Recovery Time (trr): 0ns
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Operating Temperature: -40°C to 175°C
Quality and Safety Features
RoHS3 compliant
Reliable DPAK (TO-252-3) package
Compatibility
Surface mount application
Application Areas
Power conversion and control systems
Motor drives
Welding equipment
Induction heating
Solar inverters
UPS and battery chargers
Product Lifecycle
This product is actively supported and available.
Replacement or upgrade options may be available.
Key Reasons to Choose This Product
Excellent performance and energy efficiency
Compact and reliable design
Capable of operating in high-temperature environments
Simplified circuit design due to zero reverse recovery time
Proven reliability and quality from STMicroelectronics