Manufacturer Part Number
STPSC6H065B-TR
Manufacturer
STMicroelectronics
Introduction
High-performance Silicon Carbide (SiC) Schottky diode
Product Features and Performance
Low forward voltage drop
Ultrafast switching
High energy efficiency
High temperature capability
High reliability
Product Advantages
Improved system efficiency
Reduced power losses
Compact design
Robust performance
Key Technical Parameters
Voltage DC Reverse (Vr) (Max): 650 V
Current Average Rectified (Io): 6A
Current Reverse Leakage @ Vr: 60 A @ 650 V
Voltage Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Reverse Recovery Time (trr): 0 ns
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Operating Temperature Junction: -40°C ~ 175°C
Quality and Safety Features
RoHS3 compliant
DPAK package for reliable surface mount
Compatibility
Compatible with a wide range of power electronic applications
Application Areas
Power supplies
Motor drives
Renewable energy systems
Electric vehicles
Industrial electronics
Product Lifecycle
Currently in production
No discontinuation planned
Upgrades and replacements available
Key Reasons to Choose This Product
Excellent efficiency and performance with SiC technology
Robust and reliable operation at high temperatures
Compact and space-saving DPAK package
Compliance with RoHS3 regulations
Broad compatibility for diverse power electronics applications
