STPSC6H065B-TR - STMicroelectronics

Manufacturer Part Number

STPSC6H065B-TR

Manufacturer

STMicroelectronics

Introduction

High-performance Silicon Carbide (SiC) Schottky diode

Product Features and Performance

Low forward voltage drop

Ultrafast switching

High energy efficiency

High temperature capability

High reliability

Product Advantages

Improved system efficiency

Reduced power losses

Compact design

Robust performance

Key Technical Parameters

Voltage DC Reverse (Vr) (Max): 650 V

Current Average Rectified (Io): 6A

Current Reverse Leakage @ Vr: 60 A @ 650 V

Voltage Forward (Vf) (Max) @ If: 1.75 V @ 6 A

Reverse Recovery Time (trr): 0 ns

Capacitance @ Vr, F: 300pF @ 0V, 1MHz

Operating Temperature Junction: -40°C ~ 175°C

Quality and Safety Features

RoHS3 compliant

DPAK package for reliable surface mount

Compatibility

Compatible with a wide range of power electronic applications

Application Areas

Power supplies

Motor drives

Renewable energy systems

Electric vehicles

Industrial electronics

Product Lifecycle

Currently in production

No discontinuation planned

Upgrades and replacements available

Key Reasons to Choose This Product

Excellent efficiency and performance with SiC technology

Robust and reliable operation at high temperatures

Compact and space-saving DPAK package

Compliance with RoHS3 regulations

Broad compatibility for diverse power electronics applications