Manufacturer Part Number
STPSC6H12B-TR1
Manufacturer
STMicroelectronics
Introduction
High-performance silicon carbide (SiC) Schottky diode
Product Features and Performance
Low forward voltage drop
Extremely fast switching speed
High current capability
Excellent thermal management
Product Advantages
Increased efficiency
Reduced power losses
Compact design
Reliable performance
Key Technical Parameters
Voltage DC Reverse (Vr) (Max): 1200 V
Current Average Rectified (Io): 6A
Voltage Forward (Vf) (Max) @ If: 1.9 V @ 6 A
Reverse Recovery Time (trr): 0 ns
Capacitance @ Vr, F: 330pF @ 0V, 1MHz
Operating Temperature Junction: -40°C ~ 175°C
Quality and Safety Features
ROHS3 Compliant
Reliable and durable construction
Compatibility
Suitable for a wide range of power electronic applications
Application Areas
Power supplies
Motor drives
Renewable energy systems
Electric vehicles
Industrial automation
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available as technology evolves
Key Reasons to Choose This Product
Exceptional efficiency and performance due to SiC technology
Compact and reliable design
Excellent thermal management capabilities
Suitable for a wide range of power electronics applications
Availability of technical support and long-term product lifecycle