Manufacturer Part Number
STPSC6H065G-TR
Manufacturer
STMicroelectronics
Introduction
High-performance silicon carbide (SiC) Schottky diode in DPAK package
Product Features and Performance
Low forward voltage drop
Ultra-fast switching speed with zero reverse recovery time
High blocking voltage capability of 650V
Low junction capacitance of 300pF
High average rectified current of 6A
Wide operating temperature range of -40°C to 175°C
Product Advantages
Efficient power conversion with low conduction and switching losses
Enables compact and lightweight power supply designs
Reliable and robust performance in high-temperature environments
Key Technical Parameters
Voltage DC Reverse (Vr): 650V
Current Average Rectified (Io): 6A
Voltage Forward (Vf): 1.75V @ 6A
Capacitance @ Vr: 300pF @ 0V, 1MHz
Reverse Recovery Time (trr): 0ns
Quality and Safety Features
RoHS3 compliant
Reliable DPAK package
Compatibility
Compatible with a wide range of power electronic applications
Application Areas
Switch-mode power supplies
Motor drives
Solar inverters
Electric vehicle chargers
Industrial and medical equipment
Product Lifecycle
This product is an active and currently available part from STMicroelectronics.
Key Reasons to Choose This Product
Excellent energy efficiency with low losses
Compact and lightweight design enabled by fast switching and high blocking voltage
Reliable performance in high-temperature environments
Proven technology and quality from a leading semiconductor manufacturer