Manufacturer Part Number
STPSC8H065G-TR
Manufacturer
STMicroelectronics
Introduction
High-performance silicon carbide (SiC) Schottky diode in DPAK package
Product Features and Performance
Extremely fast switching speed with no reverse recovery time
Low forward voltage drop
High reverse voltage blocking capability
High junction temperature operation up to 175°C
Product Advantages
Enhanced efficiency in power conversion applications
Reduced power losses
Compact size and easy integration
Key Technical Parameters
Reverse voltage: 650V
Forward current: 8A
Forward voltage drop: 1.75V at 8A
Reverse leakage current: 80μA at 650V
Capacitance: 414pF at 0V, 1MHz
Operating temperature range: -40°C to 175°C
Quality and Safety Features
RoHS3 compliant
DPAK package for surface mount assembly
Compatibility
Compatible with a wide range of power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power factor correction circuits
Electric vehicle chargers
Product Lifecycle
Currently in production
Replacements and upgrades may become available in the future as technology evolves
Several Key Reasons to Choose This Product
Excellent efficiency and low power losses due to fast switching and low forward voltage
Ability to operate at high junction temperatures up to 175°C
Compact DPAK package for easy integration
Robust and reliable performance with RoHS3 compliance