Manufacturer Part Number
STP20NM60
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
600V drain-source voltage
20A continuous drain current
290mΩ maximum ON-resistance
1500pF maximum input capacitance
192W maximum power dissipation
150°C maximum junction temperature
Product Advantages
Optimized for high-frequency and high-efficiency switching applications
Low conduction and switching losses
Robust design for reliable operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
ON-Resistance (Rds(on)): 290mΩ @ 10A, 10V
Continuous Drain Current (Id): 20A @ 25°C
Input Capacitance (Ciss): 1500pF @ 25V
Power Dissipation (Ptot): 192W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-220 package for reliable thermal management
Compatibility
Compatible with various high-frequency and high-efficiency switching applications
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial and consumer electronics
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Proven reliability and robustness
Optimized for high-frequency and high-efficiency switching
Broad compatibility with various power electronics applications
STP20NM60FP MOSSTMicroelectronics