STP20NM50FD - STMicroelectronics

Manufacturer Part Number

STP20NM50FD

Manufacturer

STMicroelectronics

Introduction

High-voltage N-channel power MOSFET in TO-220 package

Suitable for various power applications

Product Features and Performance

Operating temperature range: -65°C to 150°C

Drain-to-source voltage (Vdss): 500V

Gate-to-source voltage (Vgs): ±30V

On-state resistance (Rds(on)): 250mΩ @ 10A, 10V

Continuous drain current (Id): 20A @ 25°C

Input capacitance (Ciss): 1380pF @ 25V

Power dissipation (Tc): 192W

N-channel MOSFET technology

Product Advantages

High breakdown voltage for various high-voltage applications

Low on-state resistance for low power loss

High current handling capability

Suitable for high-frequency and high-power switch-mode applications

Key Technical Parameters

Drain-to-source voltage (Vdss): 500V

Gate-to-source voltage (Vgs): ±30V

On-state resistance (Rds(on)): 250mΩ @ 10A, 10V

Continuous drain current (Id): 20A @ 25°C

Input capacitance (Ciss): 1380pF @ 25V

Power dissipation (Tc): 192W

Quality and Safety Features

RoHS3 compliant

Suitable for through-hole mounting

Compatibility

Compatible with various high-voltage power applications

Application Areas

Switch-mode power supplies

Motor drives

Lighting ballasts

Welding equipment

Industrial automation and control

Product Lifecycle

Currently in production

Replacements or upgrades may be available in the future

Key Reasons to Choose This Product

High voltage handling capability up to 500V

Low on-state resistance for efficient power conversion

High current handling up to 20A

Suitable for high-frequency and high-power applications

RoHS3 compliance for environmental safety

Through-hole mounting for reliable installation