Manufacturer Part Number
STP20NM50FP
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor with 550V breakdown voltage and 20A continuous drain current.
Product Features and Performance
550V breakdown voltage
20A continuous drain current
Low on-resistance of 250mΩ
Fast switching performance
Suitable for high-voltage, high-current applications
Product Advantages
High power density
High efficiency
Reliable operation
Wide temperature range (-65°C to 150°C)
Key Technical Parameters
Drain-Source Voltage (Vdss): 550V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 250mΩ @ 10A, 10V
Continuous Drain Current (Id): 20A @ 25°C
Input Capacitance (Ciss): 1480pF @ 25V
Power Dissipation (Tc): 45W
Quality and Safety Features
RoHS3 compliant
TO-220FP package for enhanced thermal performance
Suitable for high-voltage, high-current applications
Compatibility
Through-hole mounting
Compatible with standard MOSFET drivers and control circuits
Application Areas
Switch-mode power supplies
Motor drives
Industrial and home appliances
Telecommunication equipment
Renewable energy systems
Product Lifecycle
This product is currently in production and widely available.
No plans for discontinuation in the near future.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High power density and efficiency
Reliable operation over a wide temperature range
Suitable for high-voltage, high-current applications
Easy integration into power electronic systems
Backed by the quality and reputation of STMicroelectronics
STP20NM60FP MOSSTMicroelectronics