Manufacturer Part Number
STP20NM60FP
Manufacturer
STMicroelectronics
Introduction
Single N-channel power MOSFET
Product Features and Performance
600V drain-to-source voltage
20A continuous drain current
290mΩ on-resistance
1500pF input capacitance
45W power dissipation
150°C maximum junction temperature
MOSFET technology
Product Advantages
Excellent performance-to-cost ratio
Reliable and robust design
Suitable for high-voltage, high-current applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 600V
Gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 290mΩ @ 10A, 10V
Continuous drain current (Id): 20A @ 25°C
Quality and Safety Features
RoHS3 compliant
TO-220FP package
Compatibility
Compatible with a wide range of high-voltage, high-current applications
Application Areas
Switching power supplies
Motor drives
Home appliances
Industrial controls
Product Lifecycle
Currently available
No discontinuation or replacement plans identified
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for improved efficiency
Compact and reliable TO-220FP package
Suitable for a broad range of power electronics applications
Cost-effective solution with excellent performance-to-price ratio
STP20NM60 P20NM60STMicroelectronics