Manufacturer Part Number
STP21N65M5
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel MOSFET
Part of the MDmesh V series
Product Features and Performance
High voltage rating of 650V
Low on-resistance of 190mΩ
High continuous drain current of 17A
Fast switching performance
Low gate charge of 50nC
Wide operating temperature range up to 150°C
Product Advantages
Excellent power efficiency
Robust design for reliable operation
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 190mΩ
Continuous Drain Current (Id): 17A
Input Capacitance (Ciss): 1950pF
Power Dissipation (Ptot): 125W
Quality and Safety Features
RoHS3 compliant
TO-220 package for reliable thermal management
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current production model, no discontinuation or replacement plans
Key Reasons to Choose This Product
Excellent power efficiency and performance
Robust and reliable design for high-voltage, high-power applications
Wide operating temperature range and compatibility
Cost-effective solution for high-voltage power electronics
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