Manufacturer Part Number
STP21NM60N
Manufacturer
STMicroelectronics
Introduction
The STP21NM60N is a high-voltage, N-channel power MOSFET transistor designed for use in a wide range of power conversion and control applications.
Product Features and Performance
600V drain-source voltage rating
17A continuous drain current at 25°C
220mΩ maximum on-resistance at 8.5A, 10V
1900pF maximum input capacitance at 50V
140W maximum power dissipation at 25°C
Product Advantages
High voltage and current handling capabilities
Low on-resistance for improved efficiency
Fast switching speed and low gate charge
Robust and reliable design
Suitable for a variety of power electronics applications
Key Technical Parameters
Drain-source voltage (Vdss): 600V
Gate-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 220mΩ @ 8.5A, 10V
Continuous drain current (Id): 17A @ 25°C
Input capacitance (Ciss): 1900pF @ 50V
Power dissipation (Pd): 140W @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for use in a wide range of power electronics applications, including power supplies, motor drives, and industrial control systems.
Application Areas
Power conversion and control
Motor drives
Switched-mode power supplies
Industrial automation and control
Automotive electronics
Product Lifecycle
The STP21NM60N is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from STMicroelectronics or other manufacturers.
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for improved efficiency
Fast switching speed and low gate charge for high-frequency operation
Robust and reliable design for industrial and automotive applications
RoHS3 compliance for environmentally-friendly use
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