Manufacturer Part Number
STP21NM60ND
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
600V Drain to Source Voltage
25V Gate to Source Voltage
220mOhm Max On-State Resistance @ 8.5A, 10V
17A Continuous Drain Current @ 25°C
1800pF Max Input Capacitance @ 50V
140W Max Power Dissipation
N-Channel MOSFET
5V Max Threshold Voltage @ 250A
10V Drive Voltage Range
60nC Max Gate Charge @ 10V
Product Advantages
High voltage and current capability
Low on-state resistance
High power handling
Key Technical Parameters
Voltage Rating: 600V Drain-Source
Current Rating: 17A Continuous Drain Current
On-State Resistance: 220mOhm Max
Capacitance: 1800pF Max Input Capacitance
Quality and Safety Features
RoHS3 Compliant
TO-220 Package
Compatibility
Suitable for various power electronic applications
Application Areas
Power conversion
Motor drives
Switching power supplies
Industrial controls
Product Lifecycle
Current product, no discontinuation plans
Key Reasons to Choose
High voltage and current capability
Low on-state resistance for efficient power conversion
Robust TO-220 package for reliable operation
Suitable for a wide range of power electronics applications
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