Manufacturer Part Number
STP20NK50Z
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
500V Drain-Source Voltage (Vdss)
±30V Gate-Source Voltage (Vgs)
270mOhm On-Resistance (Rds(on)) @ 8.5A, 10V
17A Continuous Drain Current (Id) @ 25°C
2600pF Input Capacitance (Ciss) @ 25V
190W Power Dissipation (Tc)
119nC Gate Charge (Qg) @ 10V
Product Advantages
High Voltage and Power Capability
Low On-Resistance
Suitable for High-Power Applications
Key Technical Parameters
MOSFET Technology
TO-220 Package
-50°C to 150°C Operating Temperature Range
Quality and Safety Features
RoHS3 Compliant
Compatibility
TO-220 Package
SuperMESH Series
Application Areas
High-Power Switching and Amplifier Circuits
Motor Drives
Power Supplies
Industrial Electronics
Product Lifecycle
Current Production
No Discontinuation Planned
Replacements and Upgrades Available
Key Reasons to Choose
Excellent Power Handling Capacity
Low On-Resistance for Efficient Power Conversion
Reliable Performance in High-Power Applications
Compatibility with Standard TO-220 Packages