Manufacturer Part Number
STF33N60M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with MDmesh II Plus technology
Product Features and Performance
600V drain-source voltage
Low on-resistance (125mΩ @ 13A, 10V)
High current capability (26A continuous drain current at 25°C)
Low gate charge (45.5nC @ 10V)
Wide operating temperature range (-55°C to 150°C)
Robust design for high reliability
Product Advantages
Excellent power conversion efficiency
High power density
Reliable operation in demanding applications
Key Technical Parameters
Drain-source voltage: 600V
On-resistance: 125mΩ
Continuous drain current: 26A
Gate-source voltage: ±25V
Input capacitance: 1781pF
Power dissipation: 35W
Quality and Safety Features
RoHS3 compliant
Safe operating area (SOA) protection
Compatibility
Suitable for a wide range of power conversion applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in production, with no plans for discontinuation. Replacement or upgrade options available if needed.
Key Reasons to Choose This Product
High efficiency and power density
Reliable performance in harsh environments
Robust design for long-term operation
Compatibility with a variety of power conversion applications
Availability of replacement and upgrade options
STF31NM65M5STMicroelectronics