Manufacturer Part Number
STF30NM60ND
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
600V Drain to Source Voltage
150°C Maximum Junction Temperature
25A Continuous Drain Current
130mΩ On-Resistance
2800pF Input Capacitance
100nC Gate Charge
Product Advantages
RoHS3 Compliant
TO-220FP Package
FDmesh II Technology
Key Technical Parameters
Vdss: 600V
Vgs (Max): ±30V
Rds On (Max): 130mΩ @ 12.5A, 10V
Id (Continuous): 25A @ 25°C
Ciss (Max): 2800pF @ 50V
Power Dissipation (Max): 40W
Quality and Safety Features
RoHS3 Compliant
Compatibility
Through Hole Mounting
Application Areas
Suitable for various power switching and control applications
Product Lifecycle
Currently available
No information on upcoming discontinuation or replacements
Several Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power conversion
Compact TO-220FP package
RoHS3 compliance for environmental sustainability
FDmesh II technology for improved performance