Manufacturer Part Number
STF34NM60ND
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
RoHS3 Compliant
TO-220FP Package
Through Hole Mounting
FDmesh II Series
150°C Maximum Junction Temperature
600V Drain-Source Voltage
±25V Gate-Source Voltage
110mΩ Maximum On-Resistance
29A Continuous Drain Current at 25°C
2785pF Maximum Input Capacitance
40W Maximum Power Dissipation
N-Channel MOSFET
5V Maximum Gate Threshold Voltage
10V Drive Voltage Range
Product Advantages
High voltage rating
Low on-resistance
High current capability
Compact TO-220 package
Key Technical Parameters
Drain-Source Voltage: 600V
Gate-Source Voltage: ±25V
On-Resistance: 110mΩ
Continuous Drain Current: 29A
Input Capacitance: 2785pF
Power Dissipation: 40W
Gate Threshold Voltage: 5V
Quality and Safety Features
RoHS3 Compliant
TO-220 Package for Reliable Operation
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Product Lifecycle
Current product
Availability of replacements and upgrades from the manufacturer
Key Reasons to Choose This Product
High voltage and current capability
Low on-resistance for efficient power conversion
Compact and reliable TO-220 package
Suitable for a variety of power electronics applications
STF31N65M5 31N65M5STMicroelectronics