Manufacturer Part Number
STF38N65M5
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET transistor
Product Features and Performance
650V drain-source voltage
95mΩ max on-resistance
30A continuous drain current
3000pF max input capacitance
71nC max gate charge
150°C max junction temperature
Product Advantages
Excellent performance and efficiency
Reliable and robust design
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 95mΩ @ 15A, 10V
Continuous Drain Current (Id): 30A @ 25°C
Input Capacitance (Ciss): 3000pF @ 100V
Power Dissipation (Pd): 35W @ Tc
Quality and Safety Features
RoHS3 compliant
Safe and reliable operation
Compatibility
Compatible with various high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Welding equipment
Industrial controls
Automotive electronics
Product Lifecycle
Currently available
No plans for discontinuation
Several Key Reasons to Choose This Product
Excellent performance and efficiency
Reliable and robust design
Suitable for a wide range of high-voltage, high-power applications
RoHS3 compliant for environmental safety
Readily available and no plans for discontinuation
STF3N62K3 3N62K3STMicroelectronics