Manufacturer Part Number
STF36N60M6
Manufacturer
STMicroelectronics
Introduction
High-performance power MOSFET device
Product Features and Performance
Optimized for high efficiency power conversion
Improved RDS(on) performance
Reduced gate charge for faster switching
Suitable for a wide range of applications including power supplies, motor drives, and industrial controls
Product Advantages
Low on-state resistance for low conduction losses
Fast switching speeds for improved efficiency
Robust design for reliable operation
Extensive operating temperature range
Key Technical Parameters
Drain-Source Voltage (VDS): 600V
Maximum Gate-Source Voltage (VGS): ±25V
On-State Resistance (RDS(on)): 99mΩ @ 15A, 10V
Continuous Drain Current (ID): 30A @ 25°C
Input Capacitance (Ciss): 1960pF @ 100V
Power Dissipation (PD): 40W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
TO-220-3 package
Compatible with a wide range of power applications
Application Areas
Power supplies
Motor drives
Industrial controls
Switching power converters
Product Lifecycle
This product is currently in production and available
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and performance
Robust and reliable design
Wide operating temperature range
Suitable for a variety of power conversion applications
STF3N62K3 MOSSTMicroelectronics