Manufacturer Part Number
STF35N65DM2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor suitable for power conversion applications
Product Features and Performance
High voltage rating up to 650V
Low on-resistance down to 110mΩ
High continuous drain current up to 32A
Capable of operating at high temperatures up to 150°C
Fast switching capabilities with low gate charge of 56.3nC
Product Advantages
Excellent power efficiency due to low on-resistance
Reliable high-voltage operation
Suitable for high-power, high-temperature applications
Fast switching characteristics enable high-frequency operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 110mΩ @ 16A, 10V
Continuous Drain Current (Id): 32A @ 25°C
Input Capacitance (Ciss): 2540pF @ 100V
Power Dissipation (Tc): 40W
Quality and Safety Features
RoHS3 compliant
TO-220FP package provides robust construction and good thermal performance
Compatibility
Suitable for a wide range of power conversion applications, including motor drives, power supplies, and power inverters
Application Areas
Industrial automation
Power electronics
Renewable energy systems
Consumer electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation
Replacement or upgrade options may become available in the future as technology progresses
Several Key Reasons to Choose This Product
Excellent power efficiency and low losses due to the low on-resistance
Reliable high-voltage operation up to 650V
Capable of handling high currents up to 32A
Wide operating temperature range up to 150°C
Fast switching capabilities enable high-frequency power conversion
Robust and reliable TO-220FP package construction
STF33N60DM2STMicroelectronics