Manufacturer Part Number
STD9NM60N
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
600V Drain-Source Voltage
745mΩ On-Resistance
5A Continuous Drain Current
452pF Input Capacitance
70W Power Dissipation
Operating Temperature up to 150°C
Product Advantages
High Voltage Capability
Low On-Resistance
High Current Rating
Compact DPAK Packaging
Key Technical Parameters
Vdss: 600V
Vgs(max): ±25V
Rds(on): 745mΩ @ 3.25A, 10V
Id(continuous): 6.5A @ 25°C
Ciss: 452pF @ 50V
Pd(max): 70W @ Tc
Quality and Safety Features
RoHS3 Compliant
DPAK Packaging
Compatibility
Surface Mount Installation
Application Areas
Power Switching Applications
Motor Drives
Inverters
Power Supplies
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose
High Voltage Capability
Low On-Resistance for Efficiency
High Current Rating for Power Handling
Compact DPAK Package for Space-Saving Design
RoHS3 Compliance for Environmental Compatibility