Manufacturer Part Number
STD9N60M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET transistor
Part of the MDmesh II Plus series
Product Features and Performance
High voltage rating of 600V
Low on-resistance of 780mOhm
Continuous drain current of 5.5A at 25°C
Wide operating temperature range up to 150°C
Low input capacitance of 320pF
Maximum power dissipation of 60W
Product Advantages
Excellent switching performance
High efficiency and low power losses
Compact surface mount package
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 780mOhm
Continuous Drain Current (Id): 5.5A
Input Capacitance (Ciss): 320pF
Power Dissipation (Ptot): 60W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Renewable energy systems
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose
Excellent performance and efficiency
High reliability and ruggedness
Compact and space-saving design
Suitable for a wide range of high-voltage, high-power applications
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