Manufacturer Part Number
STD9NM50N
Manufacturer
STMicroelectronics
Introduction
N-channel power MOSFET
Part of the MDmesh II series
Product Features and Performance
500V drain-source voltage
5A continuous drain current
790mΩ on-resistance
45W power dissipation
570pF input capacitance
14nC gate charge
150°C maximum junction temperature
Product Advantages
High-performance power MOSFET
Suitable for high-voltage, high-power applications
Low on-resistance for efficient power conversion
Robust design for reliable operation
Key Technical Parameters
Drain-source voltage (Vdss): 500V
Gate-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 790mΩ
Continuous drain current (Id): 5A
Input capacitance (Ciss): 570pF
Gate charge (Qg): 14nC
Quality and Safety Features
RoHS3 compliant
DPAK package for reliable surface mount assembly
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial and consumer electronics
Product Lifecycle
Currently in production
No immediate plans for discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power conversion
Robust and reliable design for industrial applications
Compact DPAK package for space-constrained designs
RoHS compliance for environmental considerations
STDC2250BGE-UA3CONEXANT
STD9N10LT4STMicroelectronics