Manufacturer Part Number
STD9N65M2
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
650V Drain to Source Voltage
900mOhm Max On-Resistance @ 2.5A, 10V
5A Continuous Drain Current @ 25°C
315pF Max Input Capacitance @ 100V
60W Max Power Dissipation
-55°C to 150°C Operating Temperature Range
Product Advantages
Efficient power handling
Low on-resistance for low power loss
Compact DPAK package for space-saving design
Key Technical Parameters
Vdss: 650V
Vgs(max): ±25V
Rds(on) (max): 900mOhm
Id (continuous): 5A
Ciss (max): 315pF
Pd (max): 60W
Quality and Safety Features
RoHS3 compliant
DPAK package for reliable surface mount assembly
Compatibility
Suitable for use in a wide range of power electronic applications
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Household appliances
Product Lifecycle
Currently in production
Replacements and upgrades available as technology evolves
Key Reasons to Choose
High voltage and current capabilities
Efficient performance with low on-resistance
Compact and reliable DPAK package
Wide operating temperature range
RoHS compliance for environmental responsibility
STD9NM60N MOSSTMicroelectronics
STDC110BCE-UA1CONEXANT