Manufacturer Part Number
STD9N80K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel MOSFET
Product Features and Performance
800V drain-to-source voltage
Low on-resistance of 900mΩ @ 3.5A, 10V
High continuous drain current of 7A @ 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching and low gate charge of 12nC @ 10V
High power dissipation of 110W @ Tc
Product Advantages
Excellent power efficiency
High reliability and robustness
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 800V
Gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 900mΩ @ 3.5A, 10V
Continuous drain current (Id): 7A @ 25°C
Input capacitance (Ciss): 340pF @ 100V
Power dissipation (Pd): 110W @ Tc
Quality and Safety Features
RoHS3 compliant
DPAK package for surface mount
Compatibility
Compatible with various high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial electronics
Lighting and power conversion
Product Lifecycle
Currently available
No known discontinuation plans
Key Reasons to Choose This Product
Excellent power efficiency and high reliability
Wide operating temperature range and high power handling
Suitable for high-voltage, high-power applications
Surface-mount DPAK package for easy integration
STD9N10LT4STMicroelectronics
STDC110BCE-UA1CONEXANT