Manufacturer Part Number
STD9N40M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in a TO-252-3 (DPAK) package
Product Features and Performance
400V Drain-to-Source Voltage (Vdss)
6A Continuous Drain Current (Id) at 25°C
800mΩ Maximum On-Resistance (Rds(on)) at 3A, 10V
270pF Maximum Input Capacitance (Ciss) at 100V
60W Maximum Power Dissipation (Tc)
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
High efficiency due to low on-resistance
Robust design with high voltage and current handling capabilities
Suitable for high-power switching applications
Key Technical Parameters
N-Channel MOSFET
400V Drain-to-Source Voltage (Vdss)
±25V Gate-to-Source Voltage (Vgs)
800mΩ Maximum On-Resistance (Rds(on)) at 3A, 10V
270pF Maximum Input Capacitance (Ciss) at 100V
Quality and Safety Features
RoHS3 Compliant
AEC-Q101 Qualified
Compatibility
Compatible with a wide range of high-power switching applications
Application Areas
Switching Power Supplies
Motor Drives
Inverters
Industrial Controls
Product Lifecycle
Currently in production
Replacement or upgrade options available from STMicroelectronics
Several Key Reasons to Choose This Product
High efficiency and low on-resistance for improved system performance
Robust design with high voltage and current handling capabilities
Suitable for a wide range of high-power switching applications
RoHS3 compliance and AEC-Q101 qualification for quality and reliability
Availability of replacement and upgrade options from the manufacturer
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