Manufacturer Part Number
STD11NM50N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
Wide drain-source voltage range up to 500V
Low on-resistance (RDS(on)) of 470mΩ
High continuous drain current (ID) of 8.5A at 25°C
Low input capacitance (Ciss) of 547pF
Suitable for high-frequency switching applications
Product Advantages
Efficient power conversion and control
Reduced power losses
Compact and space-saving design
Key Technical Parameters
Drain-Source Voltage (VDS): 500V
Gate-Source Voltage (VGS): ±25V
On-Resistance (RDS(on)): 470mΩ
Continuous Drain Current (ID): 8.5A
Input Capacitance (Ciss): 547pF
Power Dissipation (Pd): 70W
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Switching power supplies
Motor drives
Lighting ballasts
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in active production
Replacements and upgrades available
Key Reasons to Choose This Product
High efficiency and low power loss
Compact and space-saving design
Reliable and robust performance
Suitable for high-frequency switching applications
Wide range of compatibility and applications
STD120N4F6 120N4F6STMicroelectronics
STD123AS