Manufacturer Part Number
STD11N65M5
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
Voltage Rating: 650V Drain-Source Voltage
Voltage Rating: ±25V Gate-Source Voltage
On-Resistance: 480mΩ @ 4.5A, 10V
Continuous Drain Current: 9A @ 25°C (Tc)
Input Capacitance: 620pF @ 100V
Power Dissipation: 85W @ 25°C (Tc)
Gate Charge: 17nC @ 10V
Product Advantages
Low On-Resistance for Efficient Power Switching
High Voltage Capability for Use in High-Voltage Applications
Compact DPAK Surface Mount Package
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: N-Channel
Threshold Voltage: 5V @ 250A
Drive Voltage: 10V (Max On-Resistance, Min On-Resistance)
Quality and Safety Features
RoHS3 Compliant
Suitable for High-Temperature Operation: 150°C (TJ)
Compatibility
Surface Mount Mounting Type
DPAK (TO-252-3) Package
Application Areas
Power Conversion and Management
Motor Drives
Switched-Mode Power Supplies
Industrial Electronics
Product Lifecycle
Currently in Production
Replacement or Upgrade Options Available
Key Reasons to Choose
Excellent Performance Characteristics (Low On-Resistance, High Voltage Capability)
Compact and Efficient Surface Mount Package
Suitable for High-Temperature and High-Power Applications
RoHS Compliance for Environmental Responsibility