Manufacturer Part Number
STD11N60M6
Manufacturer
STMicroelectronics
Introduction
High-performance power MOSFET transistor for power electronic applications
Product Features and Performance
Robust avalanche ruggedness
Extremely low on-resistance for high-efficiency power conversion
Fast switching and low gate charge for high-frequency operation
Positive temperature coefficient of on-resistance for easy paralleling
Fully qualified to the latest AEC-Q101 standard for automotive applications
Product Advantages
Excellent thermal dissipation with D-PAK package
Optimized for high-frequency, high-efficiency applications
Suitable for use in automotive and industrial power electronics
Key Technical Parameters
600V drain-source voltage
8A continuous drain current at 25°C
520mΩ maximum on-resistance
-55°C to 150°C operating temperature range
Quality and Safety Features
ROHS3 compliant
Qualified to AEC-Q101 standard for automotive applications
Compatibility
Suitable for surface mount assembly
Application Areas
Automotive electronics (e.g. motor drives, power supplies)
Industrial power supplies and converters
Home appliances
Renewable energy systems
Product Lifecycle
Currently in active production
No planned discontinuation, long-term availability expected
Key Reasons to Choose
Excellent power efficiency through ultra-low on-resistance
High reliability and ruggedness for demanding applications
Wide operating temperature range for versatile use
Automotive-grade quality and safety certification