Manufacturer Part Number
STD11N65M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
High-voltage operation up to 650V
Low on-resistance down to 670mΩ
Fast switching
Low gate charge
High power density
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Improved efficiency in power conversion applications
Reduced power losses
Compact design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Maximum Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 670mΩ @ 3.5A, 10V
Continuous Drain Current (Id): 7A (at Tc = 25°C)
Input Capacitance (Ciss): 410pF @ 100V
Power Dissipation (Tc): 85W
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET technology
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switched-mode power supplies
Inverters
Motor drives
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
Currently available, no plans for discontinuation
Key Reasons to Choose This Product
High efficiency and low power losses
Compact and space-saving design
Wide operating temperature range
Reliable and RoHS-compliant
Suitable for a variety of power conversion applications
STD11NM65NSTMicroelectronics
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