Manufacturer Part Number
STD11N50M2
Manufacturer
STMicroelectronics
Introduction
STD11N50M2 is a high-performance N-channel MOSFET transistor in DPAK package, part of the MDmesh II Plus series.
Product Features and Performance
500V drain-to-source voltage
530mΩ maximum on-resistance at 4A, 10V
8A continuous drain current at 25°C
395pF maximum input capacitance at 100V
85W maximum power dissipation at Tc
-55°C to 150°C operating temperature range
Product Advantages
Low on-resistance for high efficiency
High voltage handling capability
Compact DPAK surface mount package
Optimized for high-frequency, high-power switch-mode applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 530mΩ @ 4A, 10V
Drain Current (Id): 8A @ 25°C
Quality and Safety Features
RoHS3 compliant
Tested and qualified to high reliability standards
Compatibility
Can be used as a replacement for other N-channel MOSFET transistors in similar power electronic applications.
Application Areas
Switch-mode power supplies
Motor drivers
Lighting ballasts
Inverters
General power conversion applications
Product Lifecycle
Currently available and in production. No plans for discontinuation announced.
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
High voltage handling and low on-resistance for efficient power conversion
Compact and thermally efficient DPAK package
Robust and reliable for high-reliability applications
Long product lifecycle with available supply
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