Manufacturer Part Number
STD11NM60ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Part of the FDmesh II series
Product Features and Performance
600V drain-source voltage
10A continuous drain current
450mΩ maximum on-resistance
90W maximum power dissipation
850pF maximum input capacitance
30nC maximum gate charge
Product Advantages
Low on-resistance for efficient power conversion
High voltage rating for a wide range of applications
Robust design for reliable performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 450mΩ @ 5A, 10V
Continuous Drain Current (Id): 10A @ 25°C
Input Capacitance (Ciss): 850pF @ 50V
Power Dissipation (Ptot): 90W @ Tc
Quality and Safety Features
RoHS3 compliant
DPAK surface mount package
Compatibility
Suitable for a variety of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose
Excellent power efficiency due to low on-resistance
High voltage and current handling capabilities
Robust and reliable design for industrial applications
Compatibility with a wide range of power electronics systems
STD123AS
STD11NM60STMicroelectronics