MJE3055T - STMicroelectronics

Manufacturer Part Number

MJE3055T

Manufacturer

STMicroelectronics

Introduction

This is a high-power NPN bipolar junction transistor (BJT) from STMicroelectronics, suitable for a variety of power amplifier and switching applications.

Product Features and Performance

Power rating up to 75 watts

Collector-emitter breakdown voltage up to 60 volts

Collector current up to 10 amps

Transition frequency of 2 MHz

Wide operating temperature range up to 150°C

Product Advantages

Robust and reliable construction

Efficient heat dissipation

Wide range of applications

Compliant with RoHS3 directive

Key Technical Parameters

Package: TO-220

Collector-emitter breakdown voltage (max): 60V

Collector current (max): 10A

DC current gain (min): 20 @ 4A, 4V

Transistor type: NPN

Quality and Safety Features

RoHS3 compliant

Stable and reliable performance

Designed for safe operation

Compatibility

This transistor is a direct replacement for a variety of high-power NPN BJTs and can be used in many power amplifier and switching circuits.

Application Areas

Power amplifiers

Switching circuits

Motor drives

Power supplies

Industrial controls

Product Lifecycle

This product is currently in production and widely available. There are no known plans for discontinuation or replacement at this time.

Key Reasons to Choose This Product

High power handling capability up to 75 watts

Wide voltage and current ratings for versatile applications

Robust and reliable construction for long-term use

Compliance with the latest RoHS3 environmental standards

Proven track record and technical support from STMicroelectronics