MJE3055T - onsemi

Manufacturer Part Number

MJE3055T

Manufacturer

onsemi

Introduction

High-power NPN bipolar junction transistor

Suitable for power amplifier and switching applications

Product Features and Performance

Power handling capacity up to 75 watts

Collector-emitter breakdown voltage up to 60 volts

Collector current up to 10 amps

Transition frequency up to 2 MHz

DC current gain of at least 20 at 4 amps and 4 volts

Product Advantages

Robust and reliable performance

Suitable for high-power applications

Broad operating temperature range of -55°C to 150°C

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 60 V

Collector Current (Max): 10 A

Collector Cutoff Current (Max): 700 A

Saturation Voltage (Max) @ 3.3A, 10A: 8 V

DC Current Gain (Min) @ 4A, 4V: 20

Quality and Safety Features

RoHS non-compliant

TO-220 package for secure mounting and heat dissipation

Compatibility

Through-hole mounting

Suitable for power amplifier and switching applications

Application Areas

Power amplifiers

Switching circuits

Motor control

Industrial electronics

Product Lifecycle

This is an established product

Replacements and upgrades may be available

Key Reasons to Choose

Robust and reliable performance

High power handling capacity

Broad operating temperature range

Suitable for high-power applications