Manufacturer Part Number
MJE2955TG
Manufacturer
onsemi
Introduction
High-power PNP bipolar junction transistor (BJT)
Designed for high-current, high-voltage switching and amplification applications
Product Features and Performance
Capable of handling up to 75W of power
High collector-emitter voltage breakdown of 60V
High collector current rating of 10A
Transition frequency of 2MHz
Wide operating temperature range of -55°C to 150°C
Product Advantages
Robust and reliable performance
Capable of high-power and high-current operations
Suitable for various switching and amplification applications
Key Technical Parameters
Collector-Emitter Voltage (VCEO): 60V
Collector Current (IC): 10A
Power Dissipation (Pd): 75W
DC Current Gain (hFE): Minimum of 20 @ 4A, 4V
Quality and Safety Features
RoHS3 compliant
Packaged in a standard TO-220 through-hole case
Compatibility
Suitable for various high-power, high-current switching and amplification applications
Application Areas
Power supplies
Motor drives
Audio amplifiers
Inverters
Switching regulators
Product Lifecycle
Currently in production
No immediate discontinuation plans
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Robust and reliable high-power performance
Capable of handling high voltages and currents
Wide operating temperature range
RoHS3 compliance for environmental friendliness
Widely compatible with various high-power applications