Manufacturer Part Number
MJE3055T
Manufacturer
NTE Electronics, Inc.
Introduction
Bipolar Junction Transistor (BJT)
NPN transistor
Product Features and Performance
Power handling capacity up to 75W
Collector-Emitter Breakdown Voltage up to 60V
Collector Current up to 10A
DC Current Gain (hFE) of 20 min. at 4A, 4V
Transition Frequency up to 2MHz
Product Advantages
Suitable for high-power amplifier and switching applications
Reliable performance in wide temperature range (-55°C to 150°C)
RoHS3 compliant
Key Technical Parameters
Power Dissipation: 75W
Collector-Emitter Breakdown Voltage: 60V
Collector Current: 10A
DC Current Gain (hFE): 20 min. at 4A, 4V
Transition Frequency: 2MHz
Quality and Safety Features
RoHS3 compliant
Reliable TO-220 package
Compatibility
Compatible with various power amplifier and switching circuit designs
Application Areas
High-power amplifiers
Power switches
Voltage regulators
Motor drives
Lighting control
Industrial automation
Product Lifecycle
Active product
Readily available replacement parts
Key Reasons to Choose This Product
High power handling capacity
Wide operating voltage and current range
Robust performance in harsh environments
RoHS compliance for environmental friendliness
Proven reliability in various power electronics applications