MJE3055TG - onsemi

Manufacturer Part Number

MJE3055TG

Manufacturer

onsemi

Introduction

High-power NPN power transistor

Product Features and Performance

Designed for high-power switching and amplifier applications

Capable of handling high voltages and currents

Wide operating temperature range of -55°C to 150°C

Low saturation voltage for efficient power conversion

High current gain for improved efficiency

Product Advantages

Robust and reliable performance

Efficient power handling

Wide operating temperature range

Suitable for a variety of high-power applications

Key Technical Parameters

Power Dissipation: 75 W

Collector-Emitter Breakdown Voltage: 60 V

Collector Current (Max): 10 A

Collector Cutoff Current (Max): 700 mA

Vce Saturation Voltage: 8 V @ 3.3 A, 10 A

DC Current Gain (hFE): 20 @ 4 A, 4 V

Transition Frequency: 2 MHz

Quality and Safety Features

RoHS3 compliant

Housed in a durable TO-220 package

Compatibility

Suitable for a variety of high-power switching and amplifier applications

Application Areas

Power amplifiers

Motor drives

Switching power supplies

Industrial control systems

Product Lifecycle

This product is currently in production and available for purchase.

Replacements or upgrades may become available in the future as technology advances.

Key Reasons to Choose This Product

Robust and reliable performance for high-power applications

Wide operating temperature range for versatile use

Efficient power handling with low saturation voltage

High current gain for improved efficiency

Suitable for a variety of industrial and commercial applications