MJE2955T - STMicroelectronics

Manufacturer Part Number

MJE2955T

Manufacturer

STMicroelectronics

Introduction

High-power PNP bipolar junction transistor (BJT)

Designed for use in power amplifiers, power supplies, and other high-power applications

Product Features and Performance

Capable of handling up to 75 W of power

Maximum collector-emitter voltage of 60 V

Maximum collector current of 10 A

Transition frequency of 2 MHz

Collector-emitter saturation voltage of 8 V at 10 A collector current

DC current gain (hFE) of at least 20 at 4 A collector current and 4 V collector-emitter voltage

Product Advantages

Robust design for high-power applications

High current and voltage handling capabilities

Suitable for use in power amplifiers, power supplies, and other high-power circuits

Key Technical Parameters

Power rating: 75 W

Voltage rating: 60 V

Current rating: 10 A

Transition frequency: 2 MHz

DC current gain (hFE): Minimum of 20 at 4 A, 4 V

Quality and Safety Features

RoHS3 compliant

TO-220 package for efficient heat dissipation

Compatibility

Compatible with various high-power electronic applications

Application Areas

Power amplifiers

Power supplies

Other high-power electronic circuits

Product Lifecycle

Currently in active production

No known plans for discontinuation

Replacement or upgrade options may be available from STMicroelectronics

Key Reasons to Choose This Product

Robust design for high-power applications

High current and voltage handling capabilities

Suitable for use in a wide range of high-power electronic circuits

RoHS3 compliance for environmental responsibility

Efficient heat dissipation in the TO-220 package