Manufacturer Part Number
APT30GP60JDQ1
Manufacturer
Microsemi
Introduction
High-performance insulated-gate bipolar transistor (IGBT) module for power electronics applications
Product Features and Performance
Optimized for efficiency and ruggedness
Wide operating temperature range of -55°C to 150°C
Capable of handling up to 245W of power
Positive temperature coefficient for safe operation
Fast switching speed and low conduction losses
Product Advantages
Robust and reliable design
Excellent thermal management
Compact and space-saving package
Key Technical Parameters
IGBT Type: Punch-through (PT)
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 67A
On-state Voltage Drop (Vce(on)): 2.7V @ 15V, 30A
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments
Compatibility
Compatible with a variety of power electronics applications
Application Areas
Motor drives
Uninterruptible power supplies (UPS)
Renewable energy systems
Industrial power conversion
Product Lifecycle
This product is currently available and supported by the manufacturer
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and ruggedness
Wide operating temperature range
Compact and space-saving design
Robust and reliable performance
Suitable for a variety of power electronics applications