Manufacturer Part Number
APT30M19JVR
Manufacturer
Microchip Technology
Introduction
High-power N-channel MOSFET transistor designed for high-voltage, high-current switching applications.
Product Features and Performance
Drain-to-source voltage up to 300V
Continuous drain current up to 130A at 25°C
Low on-resistance of 19mΩ at 500mA, 10V
High input capacitance of 21,600pF at 25V
Power dissipation up to 700W at 25°C
Operating temperature range of -55°C to 150°C
Product Advantages
Excellent for high-voltage, high-current switching
Low on-resistance for efficient power conversion
High power handling capability
Wide operating temperature range
Key Technical Parameters
Drain-to-source voltage: 300V
Gate-to-source voltage: ±30V
On-resistance: 19mΩ @ 500mA, 10V
Continuous drain current: 130A @ 25°C
Input capacitance: 21,600pF @ 25V
Power dissipation: 700W @ 25°C
Quality and Safety Features
RoHS3 compliant
ISOTOP package for improved thermal performance
Compatibility
Compatible with standard MOSFET driver circuits
Application Areas
High-voltage, high-current switching applications
Power conversion and control systems
Industrial motor drives
Switched-mode power supplies
Product Lifecycle
This product is currently in production and widely available.
Replacements or upgrades may become available in the future as technology advances.
Several Key Reasons to Choose This Product
Excellent performance for high-voltage, high-current switching applications
Low on-resistance for efficient power conversion
High power handling capability and wide operating temperature range
Reliable and RoHS3 compliant design
Compatibility with standard MOSFET driver circuits