APT30GT60BRDQ2G - Microchip Technology

Manufacturer Part Number

APT30GT60BRDQ2G

Manufacturer

Microchip Technology

Introduction

High-performance Insulated Gate Bipolar Transistor (IGBT) for power electronics applications

Product Features and Performance

Rated for up to 250W of power

Operates in the temperature range of -55°C to 150°C (TJ)

Non-Punch-Through (NPT) IGBT design

Collector-Emitter Breakdown Voltage up to 600V

Collector Current (Ic) up to 64A

Low On-State Voltage (Vce(on)) of 2.5V @ 15V, 30A

Fast Reverse Recovery Time (trr) of 22ns

Gate Charge of 7.5nC

Pulsed Collector Current (Icm) up to 110A

Switching Energy of 80J (on) and 605J (off)

Turn-On/Off Delay Time (Td) of 12ns/225ns @ 25°C

Product Advantages

High power handling capability

Wide operating temperature range

Low conduction and switching losses

Fast switching performance

Robust and reliable design

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Ic) (Max): 64A

Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A

Reverse Recovery Time (trr): 22ns

Gate Charge: 7.5nC

Current Collector Pulsed (Icm): 110A

Switching Energy: 80J (on), 605J (off)

Td (on/off) @ 25°C: 12ns/225ns

Quality and Safety Features

RoHS3 compliant

TO-247 [B] package

Compatibility

Compatible with various power electronics applications

Application Areas

Suitable for a wide range of power electronics applications, such as motor drives, power supplies, and inverters

Product Lifecycle

Currently in active production

No plans for discontinuation or replacement

Several Key Reasons to Choose This Product

High power handling capability up to 250W

Wide operating temperature range of -55°C to 150°C (TJ)

Low conduction and switching losses for improved efficiency

Fast switching performance with short turn-on/off delay times

Robust and reliable design for dependable operation

RoHS3 compliant for environmental compliance