APT30GP60BDQ1G - Microchip Technology

Manufacturer Part Number

APT30GP60BDQ1G

Manufacturer

Microchip Technology

Introduction

High-power IGBT transistor for industrial and power electronics applications

Product Features and Performance

600V IGBT with 100A collector current rating

Low on-state voltage (Vce(on)) of 2.7V at 15V gate voltage and 30A collector current

Fast switching performance with turn-on time of 13ns and turn-off time of 55ns

High power handling capability up to 463W

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent efficiency and power density

Reliable and robust design for industrial applications

Optimized for fast switching and low power loss

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Ic) (Max): 100A

Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A

Gate Charge: 90nC

Current Collector Pulsed (Icm): 120A

Switching Energy: 260J (on), 250J (off)

Td (on/off) @ 25°C: 13ns/55ns

Quality and Safety Features

RoHS3 compliant

TO-247 package for through-hole mounting

Compatibility

Suitable for a wide range of industrial and power electronics applications

Application Areas

Motor drives

Power supplies

Inverters

Welding equipment

Induction heating

Uninterruptible power supplies (UPS)

Product Lifecycle

Currently in production, no known discontinuation plans

Several Key Reasons to Choose This Product

High power handling and efficiency for demanding industrial applications

Fast switching performance for improved system response and reduced power loss

Reliable and robust design for long-term operation in harsh environments

Wide operating temperature range for flexible system design

RoHS compliance for environmental sustainability