APT30GN60BG - Microchip Technology

Manufacturer Part Number

APT30GN60BG

Manufacturer

Microchip Technology

Introduction

High-power insulated-gate bipolar transistor (IGBT) for industrial and power applications

Product Features and Performance

Trench field stop IGBT technology

Low on-state voltage drop

Fast switching speed

High short-circuit withstand capability

High avalanche energy capability

High thermal cycling capability

Product Advantages

Efficient power conversion

Reliable and robust performance

Compact and easy to integrate

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600 V

Current Collector (Ic) (Max): 63 A

Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A

Gate Charge: 165 nC

Current Collector Pulsed (Icm): 90 A

Switching Energy: 525J (on), 700J (off)

Td (on/off) @ 25°C: 12ns/155ns

Quality and Safety Features

RoHS3 compliant

Designed for industrial and power applications

Compatibility

TO-247 package

Application Areas

Industrial motor drives

Power supplies

Welding equipment

Induction heating

Solar inverters

UPS systems

Product Lifecycle

Current product, not nearing discontinuation

Replacements and upgrades available

Several Key Reasons to Choose This Product

Efficient power conversion with low on-state voltage drop

Fast switching speed for improved system performance

High reliability and robustness for industrial applications

Compact and easy to integrate design

Availability of replacements and upgrades for long-term support