APT30GF60JU3 - Microchip Technology

Manufacturer Part Number

APT30GF60JU3

Manufacturer

Microchip Technology

Introduction

This product is a discrete semiconductor device in the form of an IGBT (Insulated Gate Bipolar Transistor) module.

Product Features and Performance

Power rating of 192 W

Non-Punch Through (NPT) IGBT type

Standard input configuration

Single IGBT module

Input capacitance (Cies) of 1.85 nF at 25 V

Collector-emitter breakdown voltage (max) of 600 V

Collector current (max) of 58 A

Collector-emitter saturation voltage (max) of 2.5 V at 15 V, 30 A

Collector cutoff current (max) of 40 A

Product Advantages

Compact ISOTOP package design

Suitable for chassis mount applications

Reliable and robust performance

Key Technical Parameters

IGBT Type: NPT

Input Configuration: Standard

IGBT Configuration: Single

Input Capacitance (Cies): 1.85 nF @ 25 V

Collector-Emitter Breakdown Voltage (max): 600 V

Collector Current (max): 58 A

Collector-Emitter Saturation Voltage (max): 2.5 V @ 15 V, 30 A

Collector Cutoff Current (max): 40 A

Quality and Safety Features

Reliable and robust ISOTOP package design

Suitable for safety-critical applications

Compatibility

Chassis mount installation

Application Areas

Suitable for a wide range of industrial and power electronic applications, such as motor drives, power supplies, and inverters.

Product Lifecycle

This is an actively supported product by Microchip Technology.

Replacements and upgrades may be available in the future, but the current model is not nearing discontinuation.

Key Reasons to Choose This Product

Robust and reliable ISOTOP package design

High power rating of 192 W

High collector current and voltage capabilities

Suitable for chassis mount applications

Supports a wide range of industrial and power electronic applications