APT30GF60JU2 - Microchip Technology

Manufacturer Part Number

APT30GF60JU2

Manufacturer

Microchip Technology

Introduction

High-performance, non-punch-through (NPT) insulated-gate bipolar transistor (IGBT) module for industrial and power electronics applications.

Product Features and Performance

Rated for up to 192W of power handling

NPT IGBT technology for improved reliability and efficiency

Standard input configuration

Single IGBT module design

Input capacitance of 1.85nF at 25V

Maximum collector-emitter breakdown voltage of 600V

Maximum collector current of 58A

Maximum collector-emitter saturation voltage of 2.5V at 15V gate-emitter, 30A collector

Product Advantages

Efficient and reliable NPT IGBT design

Compact SOT-227 package for space-constrained applications

Suitable for a wide range of industrial and power electronics uses

Key Technical Parameters

IGBT Type: Non-Punch-Through (NPT)

Input: Standard

Configuration: Single IGBT

Input Capacitance (Cies) @ Vce: 1.85nF @ 25V

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Ic) (Max): 58A

Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A

Current Collector Cutoff (Max): 40A

Quality and Safety Features

Robust ISOTOP package for chassis mount applications

No internal NTC thermistor

Compatibility

Compatible with standard IGBT gate drive and control circuits

Application Areas

Industrial motor drives

Power inverters and converters

Welding equipment

Uninterruptible power supplies (UPS)

Other high-power industrial and consumer electronics applications

Product Lifecycle

Currently in production, no plans for discontinuation

Replacement and upgrade options available from Microchip

Key Reasons to Choose This Product

Efficient and reliable NPT IGBT technology

Compact and robust ISOTOP package

Suitable for a wide range of high-power industrial and electronics applications

Backed by Microchip's reputation for quality and support