APT30GN60BDQ2G - Microchip Technology

Manufacturer Part Number

APT30GN60BDQ2G

Manufacturer

Microchip Technology

Introduction

Discrete Semiconductor Product - Transistors - IGBTs - Single

Product Features and Performance

Trench Field Stop IGBT design

High power density and efficiency

Low conduction and switching losses

Fast switching speed with low gate charge

Wide operating temperature range (-55°C to 175°C)

High collector-emitter breakdown voltage (600V)

High collector current rating (63A continuous, 90A pulsed)

Low on-state voltage drop (1.9V @ 15V, 30A)

Product Advantages

Excellent performance for power conversion and motor drive applications

Reliable and robust design for industrial and automotive use

Efficient heat dissipation and compact package

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 600V

Collector Current (Continuous/Pulsed): 63A/90A

On-state Voltage Drop (Vce(on)): 1.9V @ 15V, 30A

Gate Charge: 165nC

Switching Energy (On/Off): 525μJ/700μJ

Switching Times (Turn-On/Turn-Off): 12ns/155ns

Quality and Safety Features

RoHS3 compliant

TO-247 package for efficient heat dissipation

Designed and tested for industrial and automotive applications

Compatibility

Suitable for use in power conversion, motor drives, and other high-power electronic systems

Application Areas

Power supplies

Motor drives

Inverters

Uninterruptible power supplies (UPS)

Welding equipment

Industrial automation and control

Product Lifecycle

Current product, not nearing discontinuation

Replacements and upgrades available from Microchip Technology

Key Reasons to Choose

High performance and efficiency for power conversion and motor drive applications

Reliable and robust design for industrial and automotive use

Wide operating temperature range and compact package

Competitive pricing and availability from a trusted manufacturer